Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
Vgs(th)(最大值)@Id:
950mV @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
43 pF @ 10 V
功耗(最大):
360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 500mA, 4.5V