Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Vgs(th)(最大值)@Id:
900mV @ 250µA
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1136 pF @ 10 V