Technology:
MOSFET (Metal Oxide)
包装/箱:
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss):
20 V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Vgs(th)(最大值)@Id:
1.1V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 6 V
功耗(最大):
400mW (Ta), 2.8W (Tc)