Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Vgs(th)(最大值)@Id:
4V @ 1mA
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drain to Source Voltage (Vdss):
200 V
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Rds On (Max) @ Id, Vgs:
130mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
2470 pF @ 25 V