Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Vgs(th)(最大值)@Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
120 V
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
207.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
11384 pF @ 60 V