Technology:
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
30 V
包装/箱:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th)(最大值)@Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
114 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
6960 pF @ 25 V