Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs(th)(最大值)@Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 20 V