Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
包装/箱:
TO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th)(最大值)@Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
6230 pF @ 25 V