包装/箱:
8-SOIC (0.154", 3.90mm Width)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Vgs(th)(最大值)@Id:
2V @ 1mA
Rds On (Max) @ Id, Vgs:
30mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 20V