Technology:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
配置:
N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C:
600mA, 500mA
Vgs(th)(最大值)@Id:
950mV @ 250µA
包装/箱:
6-XFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
620mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
21.3pF @ 10V